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FACILITIES
- Epitaxial Growth
- Molecular Beam Epitaxy (MBE) and Laser-Assisted MBE for GaInAlAsSbN[Si,Be] and Si:
- 8 Knudsen Cells; 1 e-beam Source; 1 ECR Source; 1 RF Plasma Source
- In-Situ Processing: Semiconductor, Metal and Dielectric
- In-Situ RHEED and Mass Spectroscopy
- SP2020 Ar+ with SP168 Dye
- In-Situ AES Spectroscopy
- In-Situ UPS Spectroscopy
- In-Situ XPS Spectroscopy
- In-Situ UHV STM: Omicron
- In-Situ UHV AFM: Omicron
- Liquid Phase Epitaxy (LPE) for GaInAlAsP system
- Metalorganic Chemical Vapor Deposition (MOCVD) System for ZnSSe
- Processing
A new class 100 and class 1000 clean room facility has just been completed. Other facilities include:
- Sample Preparation : Polishing and Nomarski Contrast Microscopy
- Rapid Thermal Annealing System
- Metalization Evaporator
- Anodic Oxidation (Light Activated)
- Laser Processing
- Ion Implantation*1
- UHV Based e-Beam Dielectric Deposition System: SiO2 and Si3N4
- 3 source Sputter Deposition System for Dielectric Deposition of BaSrTiO3 Films
- Characterization
- Cathodoluminescence (CL)
- Photoluminescence (PL), Photoluminescence Excitation (PLE) and Time Resolved PL
- Absorption Measurements
- IR Macro/Micro Camera and Digital Image Processing System
- Absorption/PL imaging/mapping of Defects and Deep Levels
- Deep Level Transient Spectroscopy (DLTS): Conventional & Optical DLTS
- Hall Measurements
- Surface Photovoltage (SPV)
- Modulated Reflectivity (MR) Measurements; Electroreflectance and Photoreflectance
- Solar Cell Simulator
- Scanning Tunneling and Atomic Force Microscopy (STM/AFM); Omicron
- Auger Electron Spectroscopy (AES)
- CV Quasi Static and HF (10kHz to 10MHz), and IV
- Ultraviolet Photoelectron Spectroscopy (UPS)
- Double Crystal Xray Diffraction (DCXD)
- Secondary Ion Mass Spectrometry (SIMS)*1
- X-ray Photoelectron Spectroscopy (XPS)*1
- Micro/Macro Raman Spectroscopy*2
- Fourier Transform Infrared Microscopy (FTIR)*2
- Transmission Electron Microscopy (TEM)*3
- Field Emission (FE) Scanning Electron Microscopy (SEM)*3
- Electron Beam Induced Current (EBIC)*3
- Energy Dispersive Xray Analysis (EDXA)*3
- Xray Topography (XRT)*4
- Laue Xray Diffraction*4
- Computing
- CRAY XMP/24 Supercomputer Facility*5
- SUN 3/360C Colour Workstation*6
- DEC Alpha-AXP 3000-300 Colour Workstation
- DEC Alpha-AXP 3000-600 Colour Workstation
- NDC 16r X-Terminal
- Scala Control System and Workstation for Omicron SPM
- VR Control Computer System: SGI Indiglo 2 Maximum Impact Color Workstation*6
Key:
1. As a Project Leader in the Ontario Center for Materials Research
2. As a participant in the Laser and Light Wave Center
3. Central facilities available in the Metallurgy and Materials Science
Dept.
4. Facilities available in the Department of Chemistry
5. Facility of the Pittsburg Supercomputing Center
6. Part of our LAN which is a node on the University of Toronto Computer Network
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